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d u a l e n h a n c e m e n t m o d e m o s f e t ( n - a n d p - c h a n n e l ) c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 4 5 6 8 j f e a t u r e s a p p l i c a t i o n s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n n - c h a n n e l m o s f e t p - c h a n n e l m o s f e t n - c h a n n e l 4 0 v / 7 . 5 a , r d s ( o n ) = 2 1 m w ( t y p . ) @ v g s = 1 0 v r d s ( o n ) = 3 0 m w ( t y p . ) @ v g s = 4 . 5 v p - c h a n n e l - 4 0 v / - 6 a , r d s ( o n ) = 3 6 m w ( t y p . ) @ v g s = - 1 0 v r d s ( o n ) = 5 0 m w ( t y p . ) @ v g s = - 4 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e s a v a i l a b l e ( r o h s c o m p l i a n t ) p o w e r m a n a g e m e n t i n n o t e b o o k c o m p u t e r , p o r t a b l e e q u i p m e n t a n d b a t t e r y p o w e r e d s y s t e m s t o p v i e w o f d i p - 8 g1 s1 d1 d1 (8) (7) (2) (1) d2 g2 s2 d2 (4) (3) (5) (6) n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . apm4568 handling code temperature range package code package code j : dip-8 operating junction temperature range c : -55 to 150 o c handling code tu : tube assembly material g : halogen and lead free device apm4568 j : apm4568 xxxxx xxxxx - date code assembly material d1 d1 d2 d2 s1 g1 s2 g2
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 2 a p m 4 5 6 8 j a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) rating symbol parameter n channel p channel unit v dss drain - source voltage 40 - 40 v gss gate - source voltage 20 20 v i d * c ontinuous drain current 7.5 - 6 i dm * pulsed drain current v gs =10v (n) v gs = - 10v (p) 30 - 20 a i s * diode continuous forward cu rrent 2.8 - 2.8 a t j maximum junction temperature 150 t stg storage temperature range - 55 to 150 c t a =25 c 2 .5 p d * power dissipation t a =100 c 1 w r q ja * thermal resistance - junction to ambient 50 c / w note : *surface mounted on 1in 2 pad area, t 10sec. apm 45 68j symbol parameter test condition s min. typ. max. unit static characteristics v gs =0v, i ds =250 m a n - ch 40 - - bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a p - ch - 40 - - v v ds =32v, v gs =0v - - 1 t j =85 c n - ch - - 30 v ds = - 32v, v gs =0v - - - 1 i dss zero gate voltage drain current t j =85 c p - ch - - - 30 m a v ds =v gs , i ds =250 m a n - ch 1.3 2 2.5 v gs(th) gate threshold voltage v ds =v gs , i ds = - 250 m a p - ch - 1.3 - 1. 9 - 2.5 v v gs = 20 v, v ds =0v n - ch - - 100 i gss gate leakage current v gs =20v, v ds =0v p - ch - - 100 n a v gs =10v, i ds = 7.5 a n - ch - 21 29 v gs = - 10v, i ds = - 6 a p - ch - 36 50 v gs =4.5v, i ds = 5 a n - ch - 30 44 r ds(on) a drain - source on - s tate resistance v gs = - 4. 5v, i ds = - 4 a p - ch - 50 70 m w
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 3 a p m 4 5 6 8 j e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 45 68j symbol parameter test condition s min. typ. max. unit diode characteristics i sd = 2 a , v gs =0v n - ch - 0.8 1.1 v sd a diode forward voltage i sd = - 2 a, v gs =0v p - ch - - 0.8 - 1. 1 v dynamic characteristics b n - ch - 2 - r g gate r esistance v gs = 0 v,v ds =0v ,f=1mhz p - ch - 8 - w n - ch - 980 - c iss input capacitance p - ch - 1095 - n - ch - 110 - c oss output capacitance p - ch - 125 - n - ch - 75 - c rss reverse transfe r capacitance n - channel v gs =0v, v ds = 20 v, f requency =1.0mhz p - channel v gs =0v, v ds = - 20 v, f requency =1.0mhz p - ch - 70 - pf n - ch - 16 30 t d(on) turn - on delay time p - ch - 12 23 n - ch - 19 35 t r turn - on rise time p - ch - 21 39 n - ch - 30 55 t d(off) turn - off delay time p - ch - 43 78 n - ch - 6 12 t f turn - off fall time n - channel v dd =20v, r l =20 w , i d s = 1 a, v gen = 10v , r g = 6 w p - channel v dd = - 20v, r l =20 w , i d s = - 1 a, v gen = - 10v , r g = 6 w p - ch - 11 21 ns n - ch - 22 - p - ch - 20 - n - ch - 15 - q rr reverse recovery charge n - channel i sd =7.5a, di sd /dt =100a/ m s p - channel i sd = - 6a, di sd /dt =100a/ m s p - ch - 13 - nc gate charge characteristics b n - ch - 20 28 q g total gate charge p - ch - 20 28 n - ch - 3 - q gs gate - source charge p - ch - 3.5 - n - ch - 6 - q gd gate - drain charge n - channel v ds =20v, v gs = 10 v, i d s =7.5a p - channel v ds = - 20v, v gs = - 10 v, i d s = - 6a p - ch - 3.5 - nc n o t e a : p u l s e t e s t ; p u l s e w i d t h 3 0 0 m s , d u t y c y c l e 2 % . n o t e b : g u a r a n t e e d b y d e s i g n , n o t s u b j e c t t o p r o d u c t i o n t e s t i n g .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 4 a p m 4 5 6 8 j t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) n - c h a n n e l normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t a =25 o c 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 t a =25 o c,v g =10v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 rds(on) limit 1s t a =25 o c 10ms 1ms 100ms dc 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 50 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 5 a p m 4 5 6 8 j r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s v g s - g a t e - s o u r c e v o l t a g e ( v ) normalized threshold voltage t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) n - c h a n n e l 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 3.5v 4.5v 3v 4v v gs = 5, 6, 7, 8, 9, 10v 0 5 10 15 20 25 30 10 15 20 25 30 35 40 45 50 v gs =10v v gs =4.5v -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 m a 1 2 3 4 5 6 7 8 9 10 10 15 20 25 30 35 40 45 50 i d =7.5a d r a i n - s o u r c e o n r e s i s t a n c e r ds(on) - on - resistance (m w )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 6 a p m 4 5 6 8 j v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate - source voltage (v) t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) n - c h a n n e l -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 21m w v gs = 10v i ds = 7.5a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 30 t j =25 o c t j =150 o c 0 5 10 15 20 25 30 0 200 400 600 800 1000 1200 1400 frequency=1mhz crss coss ciss 0 4 8 12 16 20 0 1 2 3 4 5 6 7 8 9 10 v ds = 20v i d = 7.5a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 7 a p m 4 5 6 8 j t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) -i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a - v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) -i d - drain current (a) p - c h a n n e l normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t a =25 o c 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 t a =25 o c,v g =-10v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 rds(on) limit 1s t a =25 o c 10ms 1ms 100ms dc 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 50 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 8 a p m 4 5 6 8 j t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e - i d - d r a i n c u r r e n t ( a ) - v d s - d r a i n - s o u r c e v o l t a g e ( v ) -i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e - v g s - g a t e - s o u r c e v o l t a g e ( v ) normalized threshold voltage p - c h a n n e l 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 18 20 -3.5v -3v -4v v gs = -5, -6, -7, -8, -9, -10v -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds = -250 m a 0 4 8 12 16 20 10 20 30 40 50 60 70 80 90 v gs = -10v v gs = -4.5v 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 70 80 90 100 i d = -6a d r a i n - s o u r c e o n r e s i s t a n c e r ds(on) - on - resistance (m w )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 9 a p m 4 5 6 8 j t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) - v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d -i s - source current (a) - v d s - d r a i n - s o u r c e v o l t a g e ( v ) c - capacitance (pf) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) -v gs - gate - source voltage (v) p - c h a n n e l -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 36m w v gs = -10v i ds = -6a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 20 t j =25 o c t j =150 o c 0 5 10 15 20 25 30 0 200 400 600 800 1000 1200 1400 frequency=1mhz crss coss ciss 0 4 8 12 16 20 0 1 2 3 4 5 6 7 8 9 10 v ds = -20v i d = -6a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 0 a p m 4 5 6 8 j p a c k a g e i n f o r m a t i o n d i p - 8 e 1 d a 2 a 1 a l d1 ea eb e e 0 . 3 8 c b b2 s y m b o l min. max. 5.33 0.38 0.36 0.56 1.14 1.78 0.20 0.35 9.01 10.16 0.13 2.92 3.81 a a1 b b2 c d d1 e e1 e ea millimeters a2 2.92 4.95 2.54 bsc dip-8 7.62 8.26 6.10 7.11 eb l 10.92 7.62 bsc min. max. inches 0.210 0.015 0.100 bsc 0.300 bsc 0.115 0.195 0.014 0.022 0.045 0.070 0.008 0.014 0.355 0.400 0.005 0.300 0.325 0.240 0.280 0.430 0.115 0.150
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 1 a p m 4 5 6 8 j test item method description solderability mil - std - 883d - 2003 245 c, 5 sec holt mil - std - 883d - 1005.7 1000 hrs bias @125 c pct jesd - 22 - b, a102 168 hrs, 100%rh, 121 c tst mil - std - 883d - 1011.9 - 65 c~150 c, 200 cycles r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) r e l i a b i l i t y t e s t p r o g r a m t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 t e m p e r a t u r e time critical zone t l to t p profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classification temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/sec ond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface. c l a s s i f i c a t i o n r e f l o w p r o f i l e s
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 2 a p m 4 5 6 8 j table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb eutectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 2f, no. 11, lane 218, sec 2 jhongsing rd., sindain city, taipei county 23146, taiwan tel : 886-2-2910-3838 fax : 886-2-2917-3838 c l a s s i f i c a t i o n r e f l o w p r o f i l e s

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